(Hong Kong)
Product Summary
The ISSI IS41C16100-50K is a 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16100-50K offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16100-50K ideal for use in 16-bit and 32-bit wide data bus systems.
Parametrics
IS41C16100-50K absolute maximum ratings: (1)Max. RAS Access Time (tRAC): 50 to 60ns; (2)Max. CAS Access Time (tCAC): 13 to 15ns; (3)Max. Column Address Access Time (tAA): 25 to 30ns; (4)Min. EDO Page Mode Cycle Time (tPC): 20 to 25ns; (5)Min. Read/Write Cycle Time (tRC): 84 to 104ns.
Features
IS41C16100-50K features: (1)TTL compatible inputs and outputs; tristate I/O; (2)Refresh Interval; (3)JEDEC standard pinout; (4)Single power supply: 5V ± 10%; (5)Byte Write and Byte Read operation via two CAS; (6)Industrail Temperature Range -40℃ to 85℃.
Diagrams
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 IS41LV16100S |
Other |
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Data Sheet |
Negotiable |
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IS41LV16105C-50KLI-TR |
ISSI |
DRAM 16Mb (1M x 16) 50ns DRAM Async |
Data Sheet |
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IS41LV16256B-35TL |
ISSI |
DRAM 4M 256Kx16 35ns |
Data Sheet |
Negotiable |
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IS41LV16105B-60TL |
ISSI |
DRAM 16M 1Mx16 60ns |
Data Sheet |
Negotiable |
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IS41LV16105B-60KLI-TR |
ISSI |
DRAM 16M 1Mx16 60ns |
Data Sheet |
Negotiable |
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IS41LV16105B-60T |
ISSI |
DRAM 16M 1Mx16 60ns |
Data Sheet |
Negotiable |
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