Product Summary

The FQU7N20 is a N-Channel enhancement mode power field effect transistor. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology of FQU7N20 is especially tailored to minimize on-state resistance, provides superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. The FQU7N20 is well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

Parametrics

FQU7N20 absolute maximum ratings: (1)Drain-Source Voltage: 200 V; (2)Drain Current: Continuous (TC = 100℃): 3.4 A, Continuous (TC = 25℃): 5.3 A; (3)Drain Current-Pulsed: 21 A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 73 mJ; (6)Avalanche Current: 5.3 A; (7)Repetitive Avalanche Energy: 4.5 mJ; (8)Peak Diode Recovery dv/dt: 5.5 V/ns; (9)Power Dissipation (TA = 25℃): 2.5 W; (10)Power Dissipation (TC = 25℃): 45 W, Derate above 25℃: 0.36 W/℃; (11)Operating and Storage Temperature Range: -55 to +150 ℃; (12)Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds: 300 ℃.

Features

FQU7N20 features: (1)5.3A, 200V, RDS(on) = 0.69Ω @VGS = 10 V; (2)Low gate charge ( typical 8.0 nC); (3)Low Crss ( typical 9.0 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)RoHS compliant.

Diagrams

FQU7N20 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQU7N20L
FQU7N20L
Other

Data Sheet
Negotiable 
FQU7N20LTU
FQU7N20LTU
Fairchild Semiconductor
MOSFET
Data Sheet
Negotiable 
FQU7N20TU
FQU7N20TU
Fairchild Semiconductor
MOSFET 200V N-Channel QFET
Data Sheet
Negotiable