Product Summary

The 2N6080 is the RF, microwave transistor, which is applied in 230MHz FM mobile applications.

Parametrics

2N6080 absolute maximum ratings: (1)Collector to base voltage: 36V; (2)Collector to emitter voltage: 18V; (3)Emitter to base voltage: 4V; (4)Continuous collector current: 2.5A; (5)Junction temperature: 200℃; (6)Storage temperature: -65 to +150℃.

Features

2N6080 features: (1)Frequency: 175MHz; (2)Voltage: 12.5V; (3)Power out: 4 to 40w; (4)High power gain; (5)High efficiency; (6)FM classic transistors; (7)Common emiter.

Diagrams

2N6080 diagram

2N60
2N60
Other

Data Sheet
Negotiable 
2N6027
2N6027
Central Semiconductor
SCRs Prog Uni-Junction
Data Sheet
0-2500: $0.41
2500-5000: $0.40
5000-10000: $0.37
2N6027G
2N6027G
ON Semiconductor
SCRs 40V 300mW PUT
Data Sheet
0-1: $0.22
1-25: $0.16
25-100: $0.11
100-500: $0.09
2N6027RL1
2N6027RL1

THYRISTOR PROG UNIJUNCT 40V TO92
Data Sheet
Negotiable 
2N6027RL1G
2N6027RL1G
ON Semiconductor
SCRs 40V 300mW PUT
Data Sheet
0-1: $0.10
1-25: $0.09
25-100: $0.09
100-500: $0.08
2N6027RLRA
2N6027RLRA
ON Semiconductor
SCRs 40V 300mW PUT
Data Sheet
Negotiable