Product Summary

The ISSI IS41C16100-50K is a 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16100-50K offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16100-50K ideal for use in 16-bit and 32-bit wide data bus systems.

Parametrics

IS41C16100-50K absolute maximum ratings: (1)Max. RAS Access Time (tRAC): 50 to 60ns; (2)Max. CAS Access Time (tCAC): 13 to 15ns; (3)Max. Column Address Access Time (tAA): 25 to 30ns; (4)Min. EDO Page Mode Cycle Time (tPC): 20 to 25ns; (5)Min. Read/Write Cycle Time (tRC): 84 to 104ns.

Features

IS41C16100-50K features: (1)TTL compatible inputs and outputs; tristate I/O; (2)Refresh Interval; (3)JEDEC standard pinout; (4)Single power supply: 5V ± 10%; (5)Byte Write and Byte Read operation via two CAS; (6)Industrail Temperature Range -40℃ to 85℃.

Diagrams

IS41C16100-50K FUNCTIONAL BLOCK DIAGRAM

IS41C16100
IS41C16100
Other

Data Sheet
Negotiable 
IS41C16100S
IS41C16100S
Other

Data Sheet
Negotiable 
IS41C16105
IS41C16105
Other

Data Sheet
Negotiable 
IS41C16128
IS41C16128
Other

Data Sheet
Negotiable 
IS41C16256
IS41C16256
Other

Data Sheet
Negotiable 
IS41C16256C-35TLI
IS41C16256C-35TLI
ISSI
DRAM 4M, 5V, EDO DRAM 35ns, 40 pin TSOP II
Data Sheet
0-270: $2.47
270-540: $2.32
540-1080: $2.22
1080-2565: $2.15